File information: | |
File name: | irlz34n_1.pdf [preview irlz34n 1] |
Size: | 51 kB |
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Mfg: | International Rectifier |
Model: | irlz34n 1 🔎 |
Original: | irlz34n 1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier irlz34n_1.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 16-07-2021 |
User: | Anonymous |
Multipart: | No multipart |
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Extracted files: | 1 | |
File name irlz34n_1.pdf Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using 'trench' VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on-state resistance and has Ptot Total power dissipation 68 W integral zener diodes giving ESD Tj Junction temperature 175 |
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